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1

The initial stages of growth of silicon on Si(111) by slow positron annihilation low-energy electron diffraction

M.Horn Von Hoegen, J. Falta, M. Henzler

Journal:

Thin Solid Films

Year:

1989

Language:

english

File:

PDF, 401 KB

english, 1989

2

High-quality epitaxial Bi(111) films on Si(111) by isochronal annealing

T. Payer, C. Klein, M. Acet, V. Ney, M. Kammler, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen

Journal:

Thin Solid Films

Year:

2012

Language:

english

File:

PDF, 732 KB

english, 2012

3

Strain state, film and surface morphology of epitaxial topological insulator Bi2Se3 films on Si(111)

Klein, C., Vyshnepolsky, M., Kompch, A., Klasing, F., Hanisch-Blicharski, A., Winterer, M., Horn-von Hoegen, M.

Journal:

Thin Solid Films

Year:

2014

Language:

english

File:

PDF, 1.94 MB

english, 2014

4

Surfactant-stabilized strained Ge cones on Si(001)

Horn-von Hoegen, M., Al Falou, A., Müller, B. H., Köhler, U., Andersohn, L., Dahlheimer, B., Henzler, M.

Journal:

Physical Review B

Year:

1994

Language:

english

File:

PDF, 2.71 MB

english, 1994

5

Interface roughening of Ge δ layers on Si(111)

Falta, J., Gog, T., Materlik, G., Müller, B. H., Horn-von Hoegen, M.

Journal:

Physical Review B

Year:

1995

Language:

english

File:

PDF, 382 KB

english, 1995

6

Lattice accommodation of low-index planes: Ag(111) on Si(001)

Horn-von Hoegen, M., Schmidt, T., Meyer, G., Winau, D., Rieder, K. H.

Journal:

Physical Review B

Year:

1995

Language:

english

File:

PDF, 1015 KB

english, 1995

7

Strain relief by microroughness in surfactant-mediated growth of Ge on Si(001)

Horn-von Hoegen, M., Müller, B. H., Al-Falou, A.

Journal:

Physical Review B

Year:

1994

Language:

english

File:

PDF, 1.68 MB

english, 1994

8

Surfactant-mediated growth of Ge on Si(111)

Horn-von Hoegen, M., Copel, M., Tsang, J. C., Reuter, M. C., Tromp, R. M.

Journal:

Physical Review B

Year:

1994

Language:

english

File:

PDF, 1.12 MB

english, 1994

9

In-situ high-resolution low energy electron diffraction study of strain relaxation in heteroepitaxy of Bi(111) on Si(001): Interplay of strain state, misfit dislocation array and lattice parameter

Hattab, H., Jnawali, G., Horn-von Hoegen, M.

Journal:

Thin Solid Films

Year:

2014

Language:

english

File:

PDF, 727 KB

english, 2014

10

Condensation of ground state from a supercooled phase in the Si(111)-(4 × 1) → (8 × 2)-indium atomic wire system

Hafke, B., Witte, T., Janoschka, D., Dreher, P., Meyer zu Heringdorf, F.-J., Horn-von Hoegen, M.

Journal:

Structural Dynamics

Year:

2019

Language:

english

File:

PDF, 2.60 MB

english, 2019

11

Condensation of ground state from a supercooled phase in the Si(111)-(4 × 1) → (8 × 2)-indium atomic wire system

Hafke, B., Witte, T., Janoschka, D., Dreher, P., Meyer zu Heringdorf, F.-J., Horn-von Hoegen, M.

Journal:

Structural Dynamics

Year:

2019

File:

PDF, 2.60 MB

2019

12

Diffraction paradox: An unusually broad diffraction background marks high quality graphene

Chen, S., Horn von Hoegen, M., Thiel, P. A., Tringides, M. C.

Journal:

Physical Review B

Year:

2019

Language:

english

File:

PDF, 1.20 MB

english, 2019

13

The interplay of surface morphology and strain relief in surfactant mediated growth of Ge on Si(111)

M.Horn-von Hoegen, M. Pook, A. Al Falou, B.H. Müller, M. Henzler

Journal:

Surface Science Letters

Year:

1993

Language:

english

File:

PDF, 75 KB

english, 1993

14

Layer-by-layer growth of germanium on Si(100): strain-induced morphology and the influence of surfactants

U. Köhler, O. Jusko, B. Müller, M.Horn-von Hoegen, M. Pook

Journal:

Ultramicroscopy

Year:

1992

Language:

english

File:

PDF, 664 KB

english, 1992

15

Disorder-mediated ordering by self-interfactant effect in organic thin film growth of pentacene on silicon

P. Kury, K.R. Roos, D. Thien, S. Möllenbeck, D. Wall, M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf

Journal:

Organic Electronics

Year:

2008

Language:

english

File:

PDF, 464 KB

english, 2008

16

X-ray interface characterization of Ge δ layers on Si (001)

D. Bahr, J. Falta, G. Materlik, B.H. Müller, M. Horn-von Hoegen

Journal:

Physica B: Condensed Matter

Year:

1996

Language:

english

File:

PDF, 387 KB

english, 1996

17

Low energy electron diffraction of epitaxial growth of bismuth on Si(1 1 1)

M. Kammler, M. Horn-von Hoegen

Journal:

Surface Science

Year:

2005

Language:

english

File:

PDF, 299 KB

english, 2005

18

Femtosecond photoemission microscopy

F.-J. Meyer zu Heringdorf, L.I. Chelaru, S. Möllenbeck, D. Thien, M. Horn-von Hoegen

Journal:

Surface Science

Year:

2007

Language:

english

File:

PDF, 1.15 MB

english, 2007

19

Growth of Ag nanowires on Au-pre-facetted 4° vicinal Si(0 0 1)

Frank-J. Meyer zu Heringdorf, Kimberly L. Roos, Christian Wiethoff, Michael Horn-von Hoegen, Kelly R. Roos

Journal:

Surface Science

Year:

2008

Language:

english

File:

PDF, 785 KB

english, 2008

20

Nanoscale dislocation patterning in Bi(1 1 1)/Si(0 0 1) heteroepitaxy

G. Jnawali, H. Hattab, C.A. Bobisch, A. Bernhart, E. Zubkov, R. Möller, M. Horn-von Hoegen

Journal:

Surface Science

Year:

2009

Language:

english

File:

PDF, 561 KB

english, 2009

21

Kinetics of Au induced faceting of vicinal Si(1 1 1)

R Hild, C Seifert, M Kammler, F.-J Meyer zu Heringdorf, M Horn-von-Hoegen, R.A Zhachuk, B.Z Olshanetsky

Journal:

Surface Science

Year:

2002

Language:

english

File:

PDF, 923 KB

english, 2002

22

Ge on Si(0 0 1)––a hetero epitaxial playground for surface science

Michael Horn-von Hoegen

Journal:

Surface Science

Year:

2003

Language:

english

File:

PDF, 64 KB

english, 2003

23

Adsorption induced giant faceting of vicinal Si(001)

M Horn-von Hoegen, F.-J Meyer zu Heringdorf, D Kähler, Th Schmidt, E Bauer

Journal:

Thin Solid Films

Year:

1998

Language:

english

File:

PDF, 680 KB

english, 1998

24

Surfactant-mediated epitaxy of Ge on Si: progress in growth and electrical characterization

M Kammler, D Reinking, K.R Hofmann, M Horn-von Hoegen

Journal:

Thin Solid Films

Year:

1998

Language:

english

File:

PDF, 179 KB

english, 1998

25

Step arrangement control of vicinal Si(001) by Ag adsorption

A. Meier, P. Zahl, R. Vockenroth, M. Horn-von Hoegen

Journal:

Applied Surface Science

Year:

1998

Language:

english

File:

PDF, 445 KB

english, 1998

26

Surface morphology changes due to adsorbates and due to electron bombardment

M. Henzler, D. Thielking, M.Horn-von Hoegen, V. Zielasek

Journal:

Physica A: Statistical Mechanics and its Applications

Year:

1998

Language:

english

File:

PDF, 613 KB

english, 1998

27

Lattice matching periodic interfacial dislocation network in surfactant-mediated growth of Ge on Si(111)

M. Horn-von Hoegen, M. Henzler

Journal:

physica status solidi (a)

Year:

1994

Language:

english

File:

PDF, 1.02 MB

english, 1994

28

Characterization of Ge δ-doped Si(111) with RBS channelling

J. Yuhara, K. Morita, J. Falta, B. H. Müller, M. Horn-von Hoegen

Journal:

Surface and Interface Analysis

Year:

2001

Language:

english

File:

PDF, 181 KB

english, 2001

29

Surfactants: Perfect heteroepitaxy of Ge on Si(111)

M. Horn-von Hoegen

Journal:

Applied Physics A: Materials Science & Processing

Year:

1994

Language:

english

File:

PDF, 3.25 MB

english, 1994

30

Direct observation of reconstruction induced changes of surface stress for Sb on Si(111)

P. Kury, P. Zahl, M. Horn-von Hoegen

Journal:

Analytical and Bioanalytical Chemistry

Year:

2004

Language:

english

File:

PDF, 491 KB

english, 2004

31

Characterizing single crystal surfaces using high resolution electron diffraction

D. Thien, F.-J. Meyer zu Heringdorf, P. Kury, M. Horn-von Hoegen

Journal:

Analytical and Bioanalytical Chemistry

Year:

2004

Language:

english

File:

PDF, 468 KB

english, 2004

32

Diffraction of strongly convergent X-rays from picosecond acoustic transients

U. Shymanovich, M. Nicoul, J. Blums, K. Sokolowski-Tinten, A. Tarasevitch, T. Wietler, M. Horn von Hoegen, D. von der Linde

Journal:

Applied Physics A: Materials Science & Processing

Year:

2007

Language:

english

File:

PDF, 341 KB

english, 2007

33

Interplay of surface morphology, strain relief, and surface stress during surfactant mediated epitaxy of Ge on Si

P. Zahl, P. Kury, M. Horn von Hoegen

Journal:

Applied Physics A: Materials Science & Processing

Year:

1999

Language:

english

File:

PDF, 483 KB

english, 1999

34

Ultrafast electron diffraction at surfaces after laser excitation

A. Janzen, B. Krenzer, P. Zhou, D. von der Linde, M. Horn-von Hoegen

Journal:

Surface Science

Year:

2006

Language:

english

File:

PDF, 300 KB

english, 2006

35

Epitaxial Bi(111) films on Si(001): Strain state, surface morphology, and defect structure

H. Hattab, E. Zubkov, A. Bernhart, G. Jnawali, C. Bobisch, B. Krenzer, M. Acet, R. Möller, M. Horn-von Hoegen

Journal:

Thin Solid Films

Year:

2008

Language:

english

File:

PDF, 841 KB

english, 2008

36

Surfactant-grown low-doped germanium layers on silicon with high electron mobilities

K.R Hofmann, D Reinking, M Kammler, M Horn-von Hoegen

Journal:

Thin Solid Films

Year:

1998

Language:

english

File:

PDF, 506 KB

english, 1998

37

High concentration Bi δ-doping layers on Si(001)

J. Falta, O. Mielmann, T. Schmidt, A. Hille, C. Sánchez-Hanke, P. Sonntag, G. Materlik, F. Meyer zu Heringdorf, M. Kammler, M. Horn von Hoegen, M. Copel

Journal:

Applied Surface Science

Year:

1998

Language:

english

File:

PDF, 317 KB

english, 1998

38

Femtosecond X-ray measurement of coherent lattice vibrations near the Lindemann stability limit

Sokolowski-Tinten, Klaus, Blome, Christian, Blums, Juris, Cavalleri, Andrea, Dietrich, Clemens, Tarasevitch, Alexander, Uschmann, Ingo, Förster, Eckhard, Kammler, Martin, Horn-von-Hoegen, Michael

Journal:

Year:

2003

Language:

english

File:

PDF, 186 KB

english, 2003

39

Electronic acceleration of atomic motions and disordering in bismuth

Sciaini, Germán, Harb, Maher, Kruglik, Sergei G., Payer, Thomas, Hebeisen, Christoph T., Heringdorf, Frank-J. Meyer zu, Yamaguchi, Mariko, Hoegen, Michael Horn-von, Ernstorfer, Ralph, Miller, R. J. Dw

Journal:

Year:

2009

Language:

english

File:

PDF, 496 KB

english, 2009

40

Impact of thermal dependence of elastic constants on surface stress measurements

Kury, Peter, Horn-von Hoegen, Michael

Journal:

Review of Scientific Instruments

Year:

2004

Language:

english

File:

PDF, 270 KB

english, 2004

41

Influence of surfactants in Ge and Si epitaxy on Si(001)

Copel, M., Reuter, M., Horn von Hoegen, M., Tromp, R.

Journal:

Physical Review B

Year:

1990

Language:

english

File:

PDF, 554 KB

english, 1990

42

Bi surfactant mediated epitaxy of Ge on Si(111)

M. Horn-von Hoegen, F.J. Meyer zu Heringdorf, M. Kammler, C. Schaeffer, D. Reinking, K.R. Hofmann

Journal:

Thin Solid Films

Year:

1999

Language:

english

File:

PDF, 485 KB

english, 1999

43

Femtosecond X-Ray Measurement of Ultrafast Melting and Large Acoustic Transients

Sokolowski-Tinten, K., Blome, C., Dietrich, C., Tarasevitch, A., Horn von Hoegen, M., von der Linde, D., Cavalleri, A., Squier, J., Kammler, M.

Journal:

Physical Review Letters

Year:

2001

Language:

english

File:

PDF, 109 KB

english, 2001

44

Homoepitaxy of Si(111) is surface defect mediated

Michael Horn-von Hoegen, Holger Pietsch

Journal:

Surface Science

Year:

1994

Language:

english

File:

PDF, 745 KB

english, 1994

45

Epitaxial layer growth of Ag(111)-films on Si(100)

M. Horn-von Hoegen, T. Schmidt, M. Henzler, G. Meyer, D. Winau, K.H. Rieder

Journal:

Surface Science

Year:

1995

Language:

english

File:

PDF, 382 KB

english, 1995

46

Influence of H on low temperature Si(111) homoepitaxy

Michael Horn-von Hoegen, Anke Golla

Journal:

Surface Science

Year:

1995

Language:

english

File:

PDF, 442 KB

english, 1995

47

Au induced regular ordered striped domain wall structure of a (5×3) reconstruction on Si(001) studied by STM and SPA-LEED

R. Hild, F.-J. Meyer zu Heringdorf, P. Zahl, M. Horn-von Hoegen

Journal:

Surface Science

Year:

2000

Language:

english

File:

PDF, 679 KB

english, 2000

48

Hydrogen-induced domain-wall structure on Si(113)

F.-J. Meyer zu Heringdorf, H. Goldbach, H.-L. Günter, M. Horn-von Hoegen, V. Dorna, U. Köhler, M. Henzler

Journal:

Surface Science

Year:

2000

Language:

english

File:

PDF, 622 KB

english, 2000

49

Local Au coverage as driving force for Au induced faceting of vicinal Si(0 0 1): a LEEM and XPEEM study

F.-J Meyer zu Heringdorf, R Hild, P Zahl, Th Schmidt, B Ressel, S Heun, E Bauer, M Horn-von Hoegen

Journal:

Surface Science

Year:

2001

Language:

english

File:

PDF, 454 KB

english, 2001

50

Au induced reconstructions on Si(1 1 1)

C. Seifert, R. Hild, M. Horn-von Hoegen, R.A. Zhachuk, B.Z. Olshanetsky

Journal:

Surface Science

Year:

2001

Language:

english

File:

PDF, 1.37 MB

english, 2001

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